167HIGHLIGHTS 2020
Origin of scattering defect observed in large diameter Ti:Al2O3 crystals grown by the Kyropoulos technique, G. Sen (a), G. Alombert Goget (b), V. Nagirnyi (c), I. Romet (c), T.N. Tran Caliste (d), J. Baruchel (d), J. Muzya (e), L. Giroud (a), K. Lebbou (b) and Th. Duffar (a), J. Cryst. Growth 535, 125530 (2020); https://doi. org/10.1016/j.jcrysgro.2020.125530. (a) Univ. Grenoble Alpes, CNRS, Grenoble INP, SIMAP, Grenoble (France) (b) Institut Lumière Matière, UMR5306 Université Lyon1-CNRS, Villeurbanne (France)
(c) Institute of Physics, University of Tartu, Tartu (Estonia) (d) ESRF (e) RSA le rubis SA, Jarrie (France)
Decoration of growth sector boundaries with nitrogen vacancy centers in as- grown single crystal high-pressure high- temperature synthetic diamond, P. L. Diggle (a), U.F. D Haenens-Johansson (c), B.L. Green (a), C.M. Welbourn (a), T.N. Tran Thi (d), A. Katrusha (e), W. Wang (c) and M.E. Newton (a,b),
Phys. Rev. Mater. 4, 093402 (2020); https://doi.org/10.1103/ PhysRevMaterials.4.093402. (a) Department of Physics, University of Warwick, Coventry (UK) (b) EPSRC Centre for Doctoral Training in Diamond Science and Technology (UK) (c) Gemological Institute of America, New York City, New York (USA) (d) ESRF (e) New Diamond Technology Ltd, St. Petersburg (Russia)
PRINCIPAL PUBLICATION AND AUTHORS
Fig. 145: White beam X-ray topograph ((400) reflection) with the fracture and inclusion highlighted. Scale bar: 1 mm.
In another study at BM05, Diggle et al. employed the white beam topography technique to examine crystalline perfection of synthetic diamonds. Large (> 100 mm3), relatively pure (type II) single crystal diamond can be produced by high-pressure high-temperature (HPHT) synthesis. A 4.0 × 4.0 × 0.5 mm plate was cut from a HPHT diamond sample produced by New Diamond Technology Ltd (NDT) with the large
face being within 1° of the (001) plane. This sample contained a small metallic inclusion and a small fracture in the crystal, as shown in Figure 145. Furthermore, the material shows low internal strain where the average dislocation density is below 103 cm-2, and much lower in (001) growth sectors. White beam topography reveals stacking faults in the {111} growth sectors.